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J. Trop. Resour. Sustain. Sci. 6 (2018) 31-35

Synthesis and characterization of titanium dioxide doped nickel oxide dielectric materials

Nurul Ainon Bakar1, Julie Juliewatty Mohamed1*, Muhammad Azwadi Sulaiman2

1Faculty of Bioengineering and Technology, Universiti Malaysia Kelantan, Jeli Campus, Locked Bag No. 100, 17600 Jeli, Kelantan, Malaysia
2Faculty of Biengineering and Technology, Universiti Malaysia Kelantan, Universiti Malaysia Kelantan, Jeli Campus, Locked Bag No. 100, 17600 Jeli, Kelantan, Malaysia

*Email Address : This email address is being protected from spambots. You need JavaScript enabled to view it.

Abstract :

Nickel oxide (NiO) belongs to the transition metal oxide family, having good dielectric constant with the range of 103 – 105, but it has high dielectric loss. In this research, the effect of titanium dioxide (TiO2) addition into NiO was investigated. Generally, TiO2 was used in the application of electrical ceramic, catalysts, electric conductors and chemical intermediates. Ni1-xTixO1+x was prepared via solid-state reaction method with 6 different TiO2 compositions. The preparation started with the powder mixing process for 24 hours and followed by calcination process at 950 °C for 4 hours. Then, the calcined powders were compacted into 6 mm pellet shape under pressure of 250 MPa pressure. Three pellets were made for each TiO2 composition. Those pellets were sintered at 1250 °C for 5 hours. XRD results showed that pure NiO at 0.01 and 0.02 mole % of TiO2 compositions produced single NiO crystalline phase, while 0.03, 0.05 and 0.10 mol % of TiO2 showed the TiO2, instead of NiO phases. SEM analysis showed that increasing TiO2 concentration make the grain size increase, with 0.02 mole % of TiO2 gave the largest grain size, shows that 0.02 mole % is the optimum TiO2 concentration for grain size enlargement. Furthermore, the bulk density of Ni1xTixO1+xpellet was reduces at higher TiO2 concentration. In dielectric test, the addition of 0.03 mole % of TiO2 gave the highest dielectric constant with value of 4.51 x 1014 and 0.05 mole % of TiO2 gives the result of lowest dielectric loss (0.53).



Keywords : Dopant,Solid-State Reaction,Ceramic,Dielectric Constant,Dielectric Loss,